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Diffstat (limited to 'drivers/mtd/nand/nand_base.c')
-rw-r--r--drivers/mtd/nand/nand_base.c277
1 files changed, 159 insertions, 118 deletions
diff --git a/drivers/mtd/nand/nand_base.c b/drivers/mtd/nand/nand_base.c
index 128802fa5c..8ae6f34468 100644
--- a/drivers/mtd/nand/nand_base.c
+++ b/drivers/mtd/nand/nand_base.c
@@ -36,13 +36,13 @@
#include <clock.h>
#include <linux/mtd/mtd.h>
#include <linux/mtd/nand.h>
-#include <linux/err.h>
+#include <linux/mtd/nand_bch.h>
#include <linux/mtd/nand_ecc.h>
+#include <linux/err.h>
#include <asm/byteorder.h>
#include <io.h>
#include <malloc.h>
#include <module.h>
-#include <linux/mtd/nand_bch.h>
/* Define default oob placement schemes for large and small page devices */
static struct nand_ecclayout nand_oob_8 = {
@@ -326,28 +326,70 @@ static int nand_block_bad(struct mtd_info *mtd, loff_t ofs, int getchip)
}
/**
- * nand_default_block_markbad - [DEFAULT] mark a block bad
+ * nand_default_block_markbad - [DEFAULT] mark a block bad via bad block marker
* @mtd: MTD device structure
* @ofs: offset from device start
*
* This is the default implementation, which can be overridden by a hardware
- * specific driver. We try operations in the following order, according to our
- * bbt_options (NAND_BBT_NO_OOB_BBM and NAND_BBT_USE_FLASH):
+ * specific driver. It provides the details for writing a bad block marker to a
+ * block.
+ */
+static __maybe_unused int nand_default_block_markbad(struct mtd_info *mtd, loff_t ofs)
+{
+ struct nand_chip *chip = mtd->priv;
+ struct mtd_oob_ops ops;
+ uint8_t buf[2] = { 0, 0 };
+ int ret = 0, res, i = 0;
+
+ ops.datbuf = NULL;
+ ops.oobbuf = buf;
+ ops.ooboffs = chip->badblockpos;
+ if (chip->options & NAND_BUSWIDTH_16) {
+ ops.ooboffs &= ~0x01;
+ ops.len = ops.ooblen = 2;
+ } else {
+ ops.len = ops.ooblen = 1;
+ }
+ ops.mode = MTD_OPS_PLACE_OOB;
+
+ /* Write to first/last page(s) if necessary */
+ if (chip->bbt_options & NAND_BBT_SCANLASTPAGE)
+ ofs += mtd->erasesize - mtd->writesize;
+ do {
+ res = nand_do_write_oob(mtd, ofs, &ops);
+ if (!ret)
+ ret = res;
+
+ i++;
+ ofs += mtd->writesize;
+ } while ((chip->bbt_options & NAND_BBT_SCAN2NDPAGE) && i < 2);
+
+ return ret;
+}
+
+/**
+ * nand_block_markbad_lowlevel - mark a block bad
+ * @mtd: MTD device structure
+ * @ofs: offset from device start
+ *
+ * This function performs the generic NAND bad block marking steps (i.e., bad
+ * block table(s) and/or marker(s)). We only allow the hardware driver to
+ * specify how to write bad block markers to OOB (chip->block_markbad).
+ *
+ * We try operations in the following order:
* (1) erase the affected block, to allow OOB marker to be written cleanly
- * (2) update in-memory BBT
- * (3) write bad block marker to OOB area of affected block
- * (4) update flash-based BBT
- * Note that we retain the first error encountered in (3) or (4), finish the
+ * (2) write bad block marker to OOB area of affected block (unless flag
+ * NAND_BBT_NO_OOB_BBM is present)
+ * (3) update the BBT
+ * Note that we retain the first error encountered in (2) or (3), finish the
* procedures, and dump the error in the end.
-*/
-static __maybe_unused int nand_default_block_markbad(struct mtd_info *mtd, loff_t ofs)
+ */
+static int nand_block_markbad_lowlevel(struct mtd_info *mtd, loff_t ofs)
{
struct nand_chip *chip = mtd->priv;
- uint8_t buf[2] = { 0, 0 };
- int block, res, ret = 0, i = 0;
- int write_oob = !(chip->bbt_options & NAND_BBT_NO_OOB_BBM);
+ int res, ret = 0;
- if (write_oob) {
+ if (!(chip->bbt_options & NAND_BBT_NO_OOB_BBM)) {
struct erase_info einfo;
/* Attempt erase before marking OOB */
@@ -356,50 +398,16 @@ static __maybe_unused int nand_default_block_markbad(struct mtd_info *mtd, loff
einfo.addr = ofs;
einfo.len = 1 << chip->phys_erase_shift;
nand_erase_nand(mtd, &einfo, 0);
- }
-
- /* Get block number */
- block = (int)(ofs >> chip->bbt_erase_shift);
- /* Mark block bad in memory-based BBT */
- if (chip->bbt)
- chip->bbt[block >> 2] |= 0x01 << ((block & 0x03) << 1);
-
- /* Write bad block marker to OOB */
- if (write_oob) {
- struct mtd_oob_ops ops;
- loff_t wr_ofs = ofs;
+ /* Write bad block marker to OOB */
nand_get_device(mtd, FL_WRITING);
-
- ops.datbuf = NULL;
- ops.oobbuf = buf;
- ops.ooboffs = chip->badblockpos;
- if (chip->options & NAND_BUSWIDTH_16) {
- ops.ooboffs &= ~0x01;
- ops.len = ops.ooblen = 2;
- } else {
- ops.len = ops.ooblen = 1;
- }
- ops.mode = MTD_OPS_PLACE_OOB;
-
- /* Write to first/last page(s) if necessary */
- if (chip->bbt_options & NAND_BBT_SCANLASTPAGE)
- wr_ofs += mtd->erasesize - mtd->writesize;
- do {
- res = nand_do_write_oob(mtd, wr_ofs, &ops);
- if (!ret)
- ret = res;
-
- i++;
- wr_ofs += mtd->writesize;
- } while ((chip->bbt_options & NAND_BBT_SCAN2NDPAGE) && i < 2);
-
+ ret = chip->block_markbad(mtd, ofs);
nand_release_device(mtd);
}
- /* Update flash-based bad block table */
- if (IS_ENABLED(CONFIG_NAND_BBT) && chip->bbt_options & NAND_BBT_USE_FLASH) {
- res = nand_update_bbt(mtd, ofs);
+ /* Mark block bad in BBT */
+ if (chip->bbt) {
+ res = nand_markbad_bbt(mtd, ofs);
if (!ret)
ret = res;
}
@@ -411,6 +419,57 @@ static __maybe_unused int nand_default_block_markbad(struct mtd_info *mtd, loff
}
/**
+ * nand_block_markgood_lowlevel - mark a block good
+ * @mtd: MTD device structure
+ * @ofs: offset from device start
+ *
+ * We try operations in the following order:
+ * (1) erase the affected block
+ * (2) check bad block marker
+ * (3) update the BBT
+ */
+static int nand_block_markgood_lowlevel(struct mtd_info *mtd, loff_t ofs)
+{
+ struct nand_chip *chip = mtd->priv;
+ bool allow_erasebad;
+ int ret;
+
+ if (!(chip->bbt_options & NAND_BBT_NO_OOB_BBM)) {
+ struct erase_info einfo;
+
+ /* Attempt erase possibly bad block */
+ allow_erasebad = mtd->allow_erasebad;
+ mtd->allow_erasebad = true;
+ memset(&einfo, 0, sizeof(einfo));
+ einfo.mtd = mtd;
+ einfo.addr = ofs;
+ einfo.len = 1 << chip->phys_erase_shift;
+ nand_erase_nand(mtd, &einfo, 0);
+ mtd->allow_erasebad = allow_erasebad;
+
+ /*
+ * Verify erase succeded. We need to select chip again,
+ * as nand_erase_nand deselected it.
+ */
+ ret = chip->block_bad(mtd, ofs, 1);
+ if (ret)
+ return ret;
+ }
+
+ /* Mark block good in BBT */
+ if (chip->bbt) {
+ ret = nand_markgood_bbt(mtd, ofs);
+ if (ret)
+ return ret;
+ }
+
+ if (mtd->ecc_stats.badblocks > 0)
+ mtd->ecc_stats.badblocks--;
+
+ return 0;
+}
+
+/**
* nand_check_wp - [GENERIC] check if the chip is write protected
* @mtd: MTD device structure
*
@@ -453,38 +512,6 @@ static int nand_block_checkbad(struct mtd_info *mtd, loff_t ofs, int getchip,
return chip->block_bad(mtd, ofs, getchip);
}
-/**
- * nand_default_block_markgood - [DEFAULT] mark a block good
- * @mtd: MTD device structure
- * @ofs: offset from device start
- *
- * This is the default implementation, which can be overridden by
- * a hardware specific driver.
-*/
-static __maybe_unused int nand_default_block_markgood(struct mtd_info *mtd, loff_t ofs)
-{
- struct nand_chip *chip = mtd->priv;
- int block, res, ret = 0;
-
- /* Get block number */
- block = (int)(ofs >> chip->bbt_erase_shift);
- /* Mark block good in memory-based BBT */
- if (chip->bbt)
- chip->bbt[block >> 2] &= ~(0x01 << ((block & 0x03) << 1));
-
- /* Update flash-based bad block table */
- if (IS_ENABLED(CONFIG_NAND_BBT) && chip->bbt_options & NAND_BBT_USE_FLASH) {
- res = nand_update_bbt(mtd, ofs);
- if (!ret)
- ret = res;
- }
-
- if (!ret)
- mtd->ecc_stats.badblocks++;
-
- return ret;
-}
-
/* Wait for the ready pin, after a command. The timeout is caught later. */
void nand_wait_ready(struct mtd_info *mtd)
{
@@ -2804,7 +2831,6 @@ static int nand_block_isbad(struct mtd_info *mtd, loff_t offs)
*/
static int nand_block_markbad(struct mtd_info *mtd, loff_t ofs)
{
- struct nand_chip *chip = mtd->priv;
int ret;
if (!IS_ENABLED(CONFIG_MTD_WRITE))
@@ -2818,17 +2844,16 @@ static int nand_block_markbad(struct mtd_info *mtd, loff_t ofs)
return ret;
}
- return chip->block_markbad(mtd, ofs);
+ return nand_block_markbad_lowlevel(mtd, ofs);
}
/**
- * nand_block_markgood - [MTD Interface] Mark block at the given offset as bad
+ * nand_block_markgood - [MTD Interface] Mark block at the given offset as good
* @mtd: MTD device structure
* @ofs: offset relative to mtd start
*/
static int nand_block_markgood(struct mtd_info *mtd, loff_t ofs)
{
- struct nand_chip *chip = mtd->priv;
int ret;
if (!IS_ENABLED(CONFIG_MTD_WRITE))
@@ -2842,7 +2867,7 @@ static int nand_block_markgood(struct mtd_info *mtd, loff_t ofs)
if (!ret)
return 0;
- return chip->block_markgood(mtd, ofs);
+ return nand_block_markgood_lowlevel(mtd, ofs);
}
/**
@@ -2926,17 +2951,11 @@ static void nand_set_defaults(struct nand_chip *chip, int busw)
#ifdef CONFIG_MTD_WRITE
if (!chip->block_markbad)
chip->block_markbad = nand_default_block_markbad;
- if (!chip->block_markgood)
- chip->block_markgood = nand_default_block_markgood;
if (!chip->write_buf)
chip->write_buf = busw ? nand_write_buf16 : nand_write_buf;
#endif
if (!chip->read_buf)
chip->read_buf = busw ? nand_read_buf16 : nand_read_buf;
-#ifdef CONFIG_NAND_BBT
- if (!chip->scan_bbt)
- chip->scan_bbt = nand_default_bbt;
-#endif
if (!chip->controller) {
chip->controller = &chip->hwcontrol;
}
@@ -3100,6 +3119,16 @@ static int nand_id_len(u8 *id_data, int arrlen)
return arrlen;
}
+/* Extract the bits of per cell from the 3rd byte of the extended ID */
+static int nand_get_bits_per_cell(u8 cellinfo)
+{
+ int bits;
+
+ bits = cellinfo & NAND_CI_CELLTYPE_MSK;
+ bits >>= NAND_CI_CELLTYPE_SHIFT;
+ return bits + 1;
+}
+
/*
* Many new NAND share similar device ID codes, which represent the size of the
* chip. The rest of the parameters must be decoded according to generic or
@@ -3110,7 +3139,7 @@ static void nand_decode_ext_id(struct mtd_info *mtd, struct nand_chip *chip,
{
int extid, id_len;
/* The 3rd id byte holds MLC / multichip data */
- chip->cellinfo = id_data[2];
+ chip->bits_per_cell = nand_get_bits_per_cell(id_data[2]);
/* The 4th id byte is the important one */
extid = id_data[3];
@@ -3126,8 +3155,7 @@ static void nand_decode_ext_id(struct mtd_info *mtd, struct nand_chip *chip,
* ID to decide what to do.
*/
if (id_len == 6 && id_data[0] == NAND_MFR_SAMSUNG &&
- (chip->cellinfo & NAND_CI_CELLTYPE_MSK) &&
- id_data[5] != 0x00) {
+ !nand_is_slc(chip) && id_data[5] != 0x00) {
/* Calc pagesize */
mtd->writesize = 2048 << (extid & 0x03);
extid >>= 2;
@@ -3159,7 +3187,7 @@ static void nand_decode_ext_id(struct mtd_info *mtd, struct nand_chip *chip,
(((extid >> 1) & 0x04) | (extid & 0x03));
*busw = 0;
} else if (id_len == 6 && id_data[0] == NAND_MFR_HYNIX &&
- (chip->cellinfo & NAND_CI_CELLTYPE_MSK)) {
+ !nand_is_slc(chip)) {
unsigned int tmp;
/* Calc pagesize */
@@ -3212,6 +3240,20 @@ static void nand_decode_ext_id(struct mtd_info *mtd, struct nand_chip *chip,
extid >>= 2;
/* Get buswidth information */
*busw = (extid & 0x01) ? NAND_BUSWIDTH_16 : 0;
+ /*
+ * Toshiba 24nm raw SLC (i.e., not BENAND) have 32B OOB per
+ * 512B page. For Toshiba SLC, we decode the 5th/6th byte as
+ * follows:
+ * - ID byte 6, bits[2:0]: 100b -> 43nm, 101b -> 32nm,
+ * 110b -> 24nm
+ * - ID byte 5, bit[7]: 1 -> BENAND, 0 -> raw SLC
+ */
+ if (id_len >= 6 && id_data[0] == NAND_MFR_TOSHIBA &&
+ nand_is_slc(chip) &&
+ (id_data[5] & 0x7) == 0x6 /* 24nm */ &&
+ !(id_data[4] & 0x80) /* !BENAND */) {
+ mtd->oobsize = 32 * mtd->writesize >> 9;
+ }
}
}
@@ -3231,6 +3273,9 @@ static void nand_decode_id(struct mtd_info *mtd, struct nand_chip *chip,
mtd->oobsize = mtd->writesize / 32;
*busw = type->options & NAND_BUSWIDTH_16;
+ /* All legacy ID NAND are small-page, SLC */
+ chip->bits_per_cell = 1;
+
/*
* Check for Spansion/AMD ID + repeating 5th, 6th byte since
* some Spansion chips have erasesize that conflicts with size
@@ -3267,11 +3312,11 @@ static void nand_decode_bbm_options(struct mtd_info *mtd,
* Micron devices with 2KiB pages and on SLC Samsung, Hynix, Toshiba,
* AMD/Spansion, and Macronix. All others scan only the first page.
*/
- if ((chip->cellinfo & NAND_CI_CELLTYPE_MSK) &&
+ if (!nand_is_slc(chip) &&
(maf_id == NAND_MFR_SAMSUNG ||
maf_id == NAND_MFR_HYNIX))
chip->bbt_options |= NAND_BBT_SCANLASTPAGE;
- else if ((!(chip->cellinfo & NAND_CI_CELLTYPE_MSK) &&
+ else if ((nand_is_slc(chip) &&
(maf_id == NAND_MFR_SAMSUNG ||
maf_id == NAND_MFR_HYNIX ||
maf_id == NAND_MFR_TOSHIBA ||
@@ -3295,7 +3340,7 @@ static bool find_full_id_nand(struct mtd_info *mtd, struct nand_chip *chip,
mtd->erasesize = type->erasesize;
mtd->oobsize = type->oobsize;
- chip->cellinfo = id_data[2];
+ chip->bits_per_cell = nand_get_bits_per_cell(id_data[2]);
chip->chipsize = (uint64_t)type->chipsize << 20;
chip->options |= type->options;
@@ -3675,25 +3720,22 @@ int nand_scan_tail(struct mtd_info *mtd)
chip->ecc.read_oob = nand_read_oob_std;
chip->ecc.write_oob = nand_write_oob_std;
/*
- * Board driver should supply ecc.size and ecc.bytes values to
- * select how many bits are correctable; see nand_bch_init()
- * for details. Otherwise, default to 4 bits for large page
- * devices.
+ * Board driver should supply ecc.size and ecc.strength values
+ * to select how many bits are correctable. Otherwise, default
+ * to 4 bits for large page devices.
*/
if (!chip->ecc.size && (mtd->oobsize >= 64)) {
chip->ecc.size = 512;
- chip->ecc.bytes = 7;
+ chip->ecc.strength = 4;
}
- chip->ecc.priv = nand_bch_init(mtd,
- chip->ecc.size,
- chip->ecc.bytes,
- &chip->ecc.layout);
+
+ /* See nand_bch_init() for details. */
+ chip->ecc.bytes = 0;
+ chip->ecc.priv = nand_bch_init(mtd);
if (!chip->ecc.priv) {
pr_warn("BCH ECC initialization failed!\n");
BUG();
}
- chip->ecc.strength =
- chip->ecc.bytes * 8 / fls(8 * chip->ecc.size);
break;
#endif
#ifdef CONFIG_NAND_ECC_NONE
@@ -3744,8 +3786,7 @@ int nand_scan_tail(struct mtd_info *mtd)
chip->ecc.total = chip->ecc.steps * chip->ecc.bytes;
/* Allow subpage writes up to ecc.steps. Not possible for MLC flash */
- if (!(chip->options & NAND_NO_SUBPAGE_WRITE) &&
- !(chip->cellinfo & NAND_CI_CELLTYPE_MSK)) {
+ if (!(chip->options & NAND_NO_SUBPAGE_WRITE) && nand_is_slc(chip)) {
switch (chip->ecc.steps) {
case 2:
mtd->subpage_sft = 1;
@@ -3805,7 +3846,7 @@ int nand_scan_tail(struct mtd_info *mtd)
return 0;
/* Build bad block table */
- return chip->scan_bbt(mtd);
+ return nand_create_bbt(mtd);
}
EXPORT_SYMBOL(nand_scan_tail);