diff options
Diffstat (limited to 'drivers/nand/nand_base.c')
-rw-r--r-- | drivers/nand/nand_base.c | 88 |
1 files changed, 44 insertions, 44 deletions
diff --git a/drivers/nand/nand_base.c b/drivers/nand/nand_base.c index 4969a447d0..f3d15afea4 100644 --- a/drivers/nand/nand_base.c +++ b/drivers/nand/nand_base.c @@ -504,10 +504,10 @@ static int nand_check_wp (struct mtd_info *mtd) /** * nand_block_checkbad - [GENERIC] Check if a block is marked bad - * @mtd: MTD device structure - * @ofs: offset from device start - * @getchip: 0, if the chip is already selected - * @allowbbt: 1, if its allowed to access the bbt area + * @param[in] mtd: MTD device structure + * @param[in] ofs: offset from device start + * @param[in] getchip: 0, if the chip is already selected + * @param[in] allowbbt: 1, if its allowed to access the bbt area * * Check, if the block is bad. Either by reading the bad block table or * calling of the scan function. @@ -525,10 +525,10 @@ static int nand_block_checkbad (struct mtd_info *mtd, loff_t ofs, int getchip, i /** * nand_command - [DEFAULT] Send command to NAND device - * @mtd: MTD device structure - * @command: the command to be sent - * @column: the column address for this command, -1 if none - * @page_addr: the page address for this command, -1 if none + * @param[in] mtd: MTD device structure + * @param[in] command: the command to be sent + * @param[in] column: the column address for this command, -1 if none + * @param[in] page_addr: the page address for this command, -1 if none * * Send command to NAND device. This function is used for small page * devices (256/512 Bytes per page) @@ -628,10 +628,10 @@ static void nand_command (struct mtd_info *mtd, unsigned command, int column, in /** * nand_command_lp - [DEFAULT] Send command to NAND large page device - * @mtd: MTD device structure - * @command: the command to be sent - * @column: the column address for this command, -1 if none - * @page_addr: the page address for this command, -1 if none + * @param[in] mtd: MTD device structure + * @param[in] command: the command to be sent + * @param[in] column: the column address for this command, -1 if none + * @param[in] page_addr: the page address for this command, -1 if none * * Send command to NAND device. This is the version for the new large page devices * We dont have the seperate regions as we have in the small page devices. @@ -733,9 +733,9 @@ static void nand_command_lp (struct mtd_info *mtd, unsigned command, int column, /** * nand_get_device - [GENERIC] Get chip for selected access - * @this: the nand chip descriptor - * @mtd: MTD device structure - * @new_state: the state which is requested + * @param[in] this: the nand chip descriptor + * @param[in] mtd: MTD device structure + * @param[in] new_state: the state which is requested * * Get the device and lock it for exclusive access */ @@ -782,9 +782,9 @@ static void nand_get_device (struct nand_chip *this, struct mtd_info *mtd, int n /** * nand_wait - [DEFAULT] wait until the command is done - * @mtd: MTD device structure - * @this: NAND chip structure - * @state: state to select the max. timeout value + * @param[in] mtd: MTD device structure + * @param[in] this: NAND chip structure + * @param[in] state: state to select the max. timeout value * * Wait for command done. This applies to erase and program only * Erase can take up to 400ms and program up to 20ms according to @@ -873,12 +873,12 @@ static int nand_wait(struct mtd_info *mtd, struct nand_chip *this, int state) /** * nand_write_page - [GENERIC] write one page - * @mtd: MTD device structure - * @this: NAND chip structure - * @page: startpage inside the chip, must be called with (page & this->pagemask) - * @oob_buf: out of band data buffer - * @oobsel: out of band selecttion structre - * @cached: 1 = enable cached programming if supported by chip + * @param[in] mtd: MTD device structure + * @param[in] this: NAND chip structure + * @param[in] page: startpage inside the chip, must be called with (page & this->pagemask) + * @param[in] oob_buf: out of band data buffer + * @param[in] oobsel: out of band selecttion structre + * @param[in] cached: 1 = enable cached programming if supported by chip * * Nand_page_program function is used for write and writev ! * This function will always program a full page of data @@ -967,14 +967,14 @@ static int nand_write_page (struct mtd_info *mtd, struct nand_chip *this, int pa #ifdef CONFIG_MTD_NAND_VERIFY_WRITE /** * nand_verify_pages - [GENERIC] verify the chip contents after a write - * @mtd: MTD device structure - * @this: NAND chip structure - * @page: startpage inside the chip, must be called with (page & this->pagemask) - * @numpages: number of pages to verify - * @oob_buf: out of band data buffer - * @oobsel: out of band selecttion structre - * @chipnr: number of the current chip - * @oobmode: 1 = full buffer verify, 0 = ecc only + * @param[in] mtd: MTD device structure + * @param[in] this: NAND chip structure + * @param[in] page: startpage inside the chip, must be called with (page & this->pagemask) + * @param[in] numpages: number of pages to verify + * @param[in] oob_buf: out of band data buffer + * @param[in] oobsel: out of band selecttion structre + * @param[in] chipnr: number of the current chip + * @param[in] oobmode: 1 = full buffer verify, 0 = ecc only * * The NAND device assumes that it is always writing to a cleanly erased page. * Hence, it performs its internal write verification only on bits that @@ -1078,11 +1078,11 @@ out: /** * nand_read - [MTD Interface] MTD compability function for nand_read_ecc - * @mtd: MTD device structure - * @from: offset to read from - * @len: number of bytes to read - * @retlen: pointer to variable to store the number of read bytes - * @buf: the databuffer to put data + * @param[in] mtd: MTD device structure + * @param[in] from: offset to read from + * @param[in] len: number of bytes to read + * @param[in] retlen: pointer to variable to store the number of read bytes + * @param[in] buf: the databuffer to put data * * This function simply calls nand_read_ecc with oob buffer and oobsel = NULL */ @@ -1094,11 +1094,11 @@ static int nand_read (struct mtd_info *mtd, loff_t from, size_t len, size_t * re /** * nand_read_ecc - [MTD Interface] Read data with ECC - * @mtd: MTD device structure - * @from: offset to read from - * @len: number of bytes to read - * @retlen: pointer to variable to store the number of read bytes - * @buf: the databuffer to put data + * @param[in] mtd: MTD device structure + * @param[in] from: offset to read from + * @param[in] len: number of bytes to read + * @param[in] retlen: pointer to variable to store the number of read bytes + * @param[in] buf: the databuffer to put data * @oob_buf: filesystem supplied oob data buffer * @oobsel: oob selection structure * @@ -2041,7 +2041,7 @@ out: /** * single_erease_cmd - [GENERIC] NAND standard block erase command function * @mtd: MTD device structure - * @page: the page address of the block which will be erased + * @param[in] page: the page address of the block which will be erased * * Standard erase command for NAND chips */ @@ -2056,7 +2056,7 @@ static void single_erase_cmd (struct mtd_info *mtd, int page) /** * multi_erease_cmd - [GENERIC] AND specific block erase command function * @mtd: MTD device structure - * @page: the page address of the block which will be erased + * @param[in] page: the page address of the block which will be erased * * AND multi block erase command function * Erase 4 consecutive blocks |